cond-mat.mes-hall - Mesoscale and Nanoscale Physics
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Friday, January 18, 2013
1301.3908 (Zoran Ristivojevic et al.)
Relaxation of Weakly Interacting Electrons in One Dimension
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Zoran Ristivojevic, K. A. Matveev
1301.3935 (Tong Zhang et al.)
Scanning Tunneling Microscopy of Gate Tunable Topological Insulator
Bi2Se3 Thin Films
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Tong Zhang, Niv Levy, Jeonghoon Ha, Young Kuk, Joseph A. Stroscio
1301.3941 (Victor Gurarie et al.)
Topological invariants for the fractional quantum Hall states
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Victor Gurarie, Andrew M. Essin
1301.3954 (Karolina Z. Milowska et al.)
Stability and electronic structure of covalently functionalized graphene
layers
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Karolina Z. Milowska, Jacek A. Majewski
1301.3956 (Magdalena Woinska et al.)
Electronic structure of graphene functionalized with boron and nitrogen
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Magdalena Woinska, Karolina Z. Milowska, Jacek A. Majewski
1301.3977 (Kebin Fan et al.)
Three Dimensional Broadband Tunable Terahertz Metamaterials
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Kebin Fan, Andrew C. Strikwerda, Xin Zhang, Richard D. Averitt
1301.3992 (Y. Komijani et al.)
Anisotropic Zeeman splitting in p-type GaAs quantum point contacts
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Y. Komijani, M. Csontos, I. Shorubalko, U. Zuelicke, T. Ihn, K. Ensslin, D. Reuter, A. D. Wieck
1301.3995 (Y. Komijani et al.)
Experimental studies of the origin of conductance anomalies in a p-type
GaAs quantum point contact
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Y. Komijani, M. Csontos, T. Ihn, K. Ensslin, Y. Meir, D. Reuter, A. D. Wieck
1301.4081 (Xiao-Long Zhang et al.)
Quantum anomalous Hall effect and tunable topological states in 3d
transition metals doped silicene
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Xiao-Long Zhang, Lan-Feng Liu, Wu-Ming Liu
1301.4106 (Michael Her et al.)
Graphene Transfer with Reduced Residue
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Michael Her, Ryan Beams, Lukas Novotny
1301.4113 (Qi-Feng Liang et al.)
Electrically Tunable Topological State in [111] Perovskite Materials
with Antiferromagnetic Exchange Field
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Qi-Feng Liang, Long-Hua Wu, Xiao Hu
1301.4119 (Maarten Baeten et al.)
Fermi edge polaritons in a highly degenerate 2D electron gas: a
diagrammatic theory
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Maarten Baeten, Michiel Wouters
1301.4138 (Benjamin Wilsch et al.)
Spatially resolved investigation of strain and composition variations in
(In,Ga)N/GaN epilayers
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Benjamin Wilsch, Uwe Jahn, Bernd Jenichen, Jonas Lähnemann, Holger T. Grahn
1301.4142 (Friedemann Queisser et al.)
Strong Nernst-Ettingshausen effect in folded graphene
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Friedemann Queisser, Ralf Schützhold
1301.4149 (S. Varwig et al.)
Temperature dependence of hole spin coherence in (In,Ga)As quantum dots
measured by mode-locking and echo techniques
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S. Varwig, A. René, A. Greilich, D. R. Yakovlev, D. Reuter, A. D. Wieck, M. Bayer
1301.4159 (S. Jezouin et al.)
Tomonaga-Luttinger liquid physics in electronic quantum circuits
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S. Jezouin, M. Albert, F. D. Parmentier, A. Anthore, U. Gennser, A. Cavanna, I. Safi, F. Pierre
1301.4162 (P. Partovi-Azar et al.)
Stone-Wales defects can cause a metal-semiconductor transition in carbon
nanotubes depending on their orientation
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P. Partovi-Azar, A. Namiranian
1301.4182 (H. Soller et al.)
Current noise and higher order fluctuations in semiconducting bilayer
systems
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H. Soller, A. Komnik
1301.4205 (Fan Zhang et al.)
Valley Chern Numbers and Boundary Modes in Gapped Bilayer Graphene
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Fan Zhang, A. H. MacDonald, E. J. Mele
1301.4208 (F. Babaei et al.)
Characteristics of plasmonic at a metal /chiral sculptured thin film
interface
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F. Babaei, M. Omidi
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