1112.5368 (H. J. van Elferen et al.)

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene    [PDF]

H. J. van Elferen, A. Veligura, E. V. Kurganova, U. Zeitler, J. C. Maan, N. Tombros, I. J. Vera-Marun, B. J. van Wees

We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.

View original: http://arxiv.org/abs/1112.5368