Jing Wang, Xi Chen, Bang-Fen Zhu, Shou-Cheng Zhang
We consider a junction between surface $p$-type and surface $n$-type on an
ideal topological insulator in which carrier type and density in two adjacent
regions are locally controlled by composition graded doping or electrical
gating. Such junction setting on topological insulators are fundamental for
possible device application. A single gapless chiral edge state localized along
the junction interface appears in the presence of an external magnetic field,
and it can be probed by scanning tunneling microscopy and transport
measurements. We propose to realize this topological \emph{p-n} junction in
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$, which has insulating bulk properties and a
tunable surface state across the Dirac cone.
View original:
http://arxiv.org/abs/1202.1579
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