T. Maassen, J. J. van den Berg, N. IJbema, F. Fromm, T. Seyller, R. Yakimova, B. J. van Wees
We developed an easy, upscalable process to prepare lateral spin-valve
devices on epitaxially grown monolayer graphene on SiC(0001) and perform
nonlocal spin transport measurements. We observe the longest spin relaxation
times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is
strongly reduced compared to typical results on exfoliated graphene. The
increase of tau_S is probably related to the changed substrate, while the cause
for the small value of D_S remains an open question.
View original:
http://arxiv.org/abs/1202.3016
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