Srijit Goswami, M. A. Aamir, Christoph Siegert, Michael Pepper, Ian Farrer, David A. Ritchie, Arindam Ghosh
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of
optical, magnetic and electronic properties of a user-defined artificial solid.
We use a dual gated device structure to controllably tune the potential
landscape in a GaAs/AlGaAs two-dimensional electron gas (2DEG), thereby
enabling the formation of a periodic QDL. The current-voltage characteristics,
I(V), follow a power law, as expected for a QDL. In addition, a systematic
study of the scaling behavior of I(V) allows us to probe the effects of
background disorder on transport through the QDL. Our results are particularly
important for semiconductor-based QDL architectures which aim to probe
collective phenomena.
View original:
http://arxiv.org/abs/1202.3267
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