Martin V. Gustafsson, Arsalan Pourkabirian, Göran Johansson, John Clarke, Per Delsing
Measurements of the temperature and bias dependence of Single Electron
Transistors (SETs) show that charge noise increases linearly with temperature
above a voltage-dependent threshold temperature, and that its low temperature
saturation is due to self-heating. We show further that the two-level
fluctuators responsible for charge noise are in strong thermal contact with hot
electrons on the SET island, and at a temperature significantly higher than
that of the substrate. We suggest that the noise is caused by electrons
tunneling between the island and nearby potential wells.
View original:
http://arxiv.org/abs/1202.5350
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