Mirosław Woszczyna, Miriam Friedemann, Martin Götz, Eckart Pesel, Klaus Pierz, Thomas Weimann, Franz J. Ahlers
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. In our measurements, a large graphene device (150 \times 30 \mum2), exfoliated from graphite and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) x 10^-9 accompanied by a vanishing longitudinal resistance at a current level exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for CVD-grown or exfoliated graphene, are compatible with the requirements of high quality quantum resistance standards.
View original:
http://arxiv.org/abs/1203.1798
No comments:
Post a Comment