Monday, March 12, 2012

1203.1929 (Hongki Min et al.)

Interplay between phonon and impurity scattering in 2D hole transport    [PDF]

Hongki Min, E. H. Hwang, S. Das Sarma
We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10 K$View original: http://arxiv.org/abs/1203.1929

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