Interplay between phonon and impurity scattering in 2D hole transport [PDF]
Hongki Min, E. H. Hwang, S. Das SarmaWe investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10 K$View original: http://arxiv.org/abs/1203.1929
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