Bin Xia, Ming-Yi Liao, Peng Ren, Azat Sulaev, Shi Chen, Cesare Soci, Alfred Huan, Andrew T. S. Wee, Andrivo Rusydi, Shun-Qing Shen, Lan Wang
We synthesized high quality topological insulator Bi1.5Sb0.5Te1.8Se1.2 single crystals with huge bulk resistivity via modified Bridgeman method. Nano-devices were fabricated by 200 nm thick Bi1.5Sb0.5Te1.8Se1.2 exfoliated flakes. Angle-dependent magneto-resistance curves of the nanoflake devices merge to a universal curve when the x-axis is the perpendicular component of the applied magnetic field. A fit to the 2D weak antilocalization theory for the nanoflake device gives ~T-0.51 dependence of the phase breaking length (< 200 nm) on temperature within 2 Tesla field. A time dependent universal conductance fluctuation was observed in the nanoflake devices. All the experimental results indicate that near 100% surface transport is realized in the 3D 200 nm thick nanoflake devices.
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http://arxiv.org/abs/1203.2997
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