Tuesday, May 15, 2012

1205.2835 (Jian Zhu et al.)

Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions    [PDF]

Jian Zhu, J. A. Katine, Graham E. Rowlands, Yu-Jin Chen, Zheng Duan, Juan G. Alzate, Pramey Upadhyaya, Juergen Langer, Pedram Khalili Amiri, Kang L. Wang, Ilya N. Krivorotov
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.
View original: http://arxiv.org/abs/1205.2835

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