Tuesday, June 12, 2012

1206.2242 (Bernd Jenichen et al.)

Residual disorder and diffusion in thin Heusler alloy films    [PDF]

Bernd Jenichen, Jens Herfort, Thomas Hentschel, Andrei Nikulin, Xiang Kong, Achim Trampert, Ivo Zizak
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and X-ray diffraction. The films contained inhomogeneous distributions of ordered L2_1 and B2 phases. The average stoichiometry was controlled by lattice parameter measurements, however diffusion processes lead to inhomogeneities of the atomic concentrations and the degradation of the interface, influencing long-range order. An average long-range order of 30-60% was measured by grazing-incidence X-ray diffraction, i.e. the as-grown Co2FeSi films were highly but not fully ordered. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were found using dark-field TEM images taken with superlattice reflections.
View original: http://arxiv.org/abs/1206.2242

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