1206.2872 (P. J. Koppinen et al.)

Fabrication and Electrical Characterization of Fully CMOS Si Single
Electron Devices    [PDF]

P. J. Koppinen, M. D. Stewart, Jr., Neil M. Zimmerman

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 G{\Omega}, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.

View original: http://arxiv.org/abs/1206.2872