Mika Prunnila, Sampo J. Laakso
We study how energy and heat are transferred between two two-dimensional carrier systems due to interlayer carrier interaction. We adopt perturbation theory and fluctuation-dissipation relations and derive general expression for the interlayer energy transfer rate, which is applicable to semiconductor and graphene based bilayers. Our detailed calculations for GaAs and Si bilayers suggest that the interlayer energy transfer can exceed the electron-phonon energy transfer below (system dependent) finite crossover temperature. For example, for low mobility Si bilayer with 200 nm layer separation we find a crossover temperature of \sim 1.4 K.
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http://arxiv.org/abs/1207.5919
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