J. N. B. Rodrigues, N. M. R. Peres, J. M. B. Lopes dos Santos
We present an analytical method to address the scattering of electrons by linear grain boundaries in graphene. The method is illustrated with a simplified model of the grain boundary, containing only pentagons. The problem is also formulated in a continuum description, which agrees with the more complete tight-binding calculation for low energies. We calculate the conductance, in the low energy limit, across such a defect and find it to be proportional to k_F at low temperatures. This leads to the prediction that the conductivity of a polycrystalline sample should be proportional do k_Fd, where d is some characteristic domain size. The method can be straightforwardly generalized to more realistic linear defects.
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http://arxiv.org/abs/1208.0822
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