Monday, September 10, 2012

1209.1535 (Karolina Z. Milowska et al.)

Functionalization of carbon nanotubes with -CH$_n$, -NH$_n$ fragments,
-COOH and -OH groups
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Karolina Z. Milowska, Jacek A. Majewski
We present results of extensive theoretical studies concerning stability, morphology, and band structure of single wall carbon nanotubes (CNTs) covalently functionalized by -CH$_n$(for n=2,3,4),-NH$_n$(for n=1,2,3,4),-COOH and -OH groups. Our studies are based on {\sl ab initio} calculations in the framework of the density functional theory. We determine the dependence of the binding energies on the concentration of the adsorbed molecules, critical densities of adsorbed molecules, global and local changes in the morphology, and electronic structure paying particular attention to the functionalization induced changes of the band gaps. These studies reveal physical mechanisms that determine stability and electronic structure of those systems and also provide valuable theoretical predictions relevant for application. Functionalization of CNTs causes generally their elongation and locally sp$^2$$\to$sp$^3$ rehybridization in the neighborhood of chemisorbed groups. For adsorbants making particularly strong covalent bonds with the CNTs(-CH$_2$), we observe formation of the 5/7 defects. In CNTs functionalized with -CH$_2$,-NH$_4$, and -OH, we determine critical density of molecules that could be covalently bound to CNTs. Functionalization of CNTs can be utilized for band gap engineering and also lead to changes in their metallic/semiconductor character. In semiconducting CNTs, adsorbants such as -CH$_3$,-NH$_2$,-OH and -COOH, introduce 'impurity' bands in the band gap of pristine CNTs. In the case of -CH$_3$,-NH$_2$, the induced band gaps are typically smaller than in the pure CNT and depend strongly on the concentration of adsorbants. However, functionalization of semiconducting CNTs with -OH leads to the metallization of CNTs. On the other hand, the functionalization of semi-metallic (9,0)CNT with -CH$_2$ causes the increase of the band gap and induces semi-metall to semiconductor transition.
View original: http://arxiv.org/abs/1209.1535

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