P. J. Zomer, M. H. D. Guimarães, N. Tombros, B. J. van Wees
We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 {\mu}m at room temperature, the largest distance measured so far for graphene. Due to enhanced charge carrier diffusion, spin relaxation lengths are measured up to 4.5 {\mu}m. The relaxation times are similar to values for lower quality SiO$_2$ based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.
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http://arxiv.org/abs/1209.1999
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