1210.3123 (H. Sasakura et al.)

Bi-directional photon extraction from an epitaxially grown semiconductor
quantum dot sandwiched by single mode optical fibers    [PDF]

H. Sasakura, X. Liu, S. Odashima, H. Kumano, S. Muto, I. Suemune

We report on the experimental demonstration of single-photon emission originating from epitaxially grown semiconductor quantum dots sandwiched by two conventional single mode optical fibers. The InAs quantum dots as nanoscale photon emitters are grown on GaAs substrate by using solid source molecular beam epitaxy. Flake forms of the epitaxial layer containing the InAs quantum dots are made by scratching with an ordinary diamond cutter and are fixed mechanically by both side with the edge faces of the single mode fiber patch cables. The emitting photons from the nanoscale emitter are taken out of both side through the single mode fibers. Clear antibunching between two outputs of two single mode fiber patch cables is observed in second-order photon correlation measurements with superconducting single photon detectors and time amplitude converter.

View original: http://arxiv.org/abs/1210.3123