Wenxi Lai, Yunhui Xing, Zhongshui Ma
Phase relaxation of electrons transferring through an electromechanical transistor is studied using the Aharonov-Bohm interferometer. With the approach of quantum master equation, the phase properties of an electron are numerically analyzed based on the interference fringes. It is shown that excited levels of the nanomechanical oscillator play important role for depression of the Aharonov-Bohm interference. The depression is caused by the enhanced current and random phase shifts of electron waves in the vibrational junction. Scattering electron waves with respect to two adjacent vibrational levels have a phase difference of $\pi$. The character of the phase change by $\pi$ depends on the oscillator frequency only and robust for the wide range variance of the applied voltage, the tunneling length and the damping rate of the mechanical oscillator.
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http://arxiv.org/abs/1211.2311
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