Friday, November 16, 2012

1211.3486 (Kun-Rok Jeon et al.)

Electrical Investigation of the Oblique Hanle Effect in
Ferromagnet/Oxide/Semiconductor Contacts
   [PDF]

Kun-Rok Jeon, Byoung-Chul Min, Youn-Ho Park, Seung-Young Park, Sung-Chul Shin
We report the electrical investigation of the oblique Hanle effect (i.e., the Hanle effect in an oblique magnetic field) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, irrespective of the bias current and temperature, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos2({\theta}) in moderate magnetic fields at an oblique angle {\theta} to the spin direction, revealing universal behavior. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. From the comparison study of the OHE and tunneling anisotropy (TA) signals, we find that the non-negligible TA signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are mainly ascribed to the anisotropic spin accumulation due to the OHE caused by the misalignment between the external magnetic field and the magnetization of CoFe.
View original: http://arxiv.org/abs/1211.3486

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