Monday, November 19, 2012

1211.3757 (Ming-Hao Liu)

Gate-induced carrier density modulation in bulk graphene: Theories and
electrostatic simulation using Matlab pdetool
   [PDF]

Ming-Hao Liu
Theories of the gate-induced carrier density modulation in bulk graphene are reviewed, and a numerical simulation procedure based on electrostatic simulation using Matlab's pdetool is introduced. A brief introduction to the usage of the tool aiming at the present electrostatic problem is introduced particularly for the readers who are as well Matlab users. The analytical capacitance models and the numerical simulation, namely the Poisson-Dirac iteration method, are compared, showing that the quantum capacitance correction plays usually a minor role. Practical examples corresponding to realistic experimental conditions for graphene pnp junctions, superlattices, and linear background potential are shown to illustrate the applicability of the introduced methods for calculating the carrier density modulation in bulk graphene.
View original: http://arxiv.org/abs/1211.3757

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