A. Hernandez-Cabrera, P. Aceituno
We have studied the dependence of the electronic energy spin-splitting of Ga(x)In(1-x)As/Al(y)In(1-y)As based double quantum wells (narrow gap structures) under in-plane magnetic fields. To do this, we have developed an improved version of the Transfer Matrix Approach that consider contributions from the abrupt interfaces and external electric fields when tunneling through central barrier exists. We have included the dependence of the Lande g-factor on the external applied field. Variations of the electron spin-splitting energy lead to some peculiarities of the density of states. Because the density of states is directly related to photoluminescence excitation, these peculiarities can be observed by this technique.
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http://arxiv.org/abs/1302.2012
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