1302.4026 (A. Kechiantz et al.)

Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs
type-II quantum dots by concentrated sunlight in intermediate band solar
cells with separated absorption and depletion regions    [PDF]

A. Kechiantz, A. Afanasev, J. -L. Lazzari

We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAs absorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAs absorber with built-in AlyGa1-ySb QDs (0View original: http://arxiv.org/abs/1302.4026