1303.2771 (Laurens H. Willems van Beveren et al.)

Progress Towards Opto-Electronic Characterization of Indium Phosphide
Nanowire Transistors at milli-Kelvin temperatures    [PDF]

Laurens H. Willems van Beveren, Jeffrey C. McCallum, Hoe H. Tan, Chennupati Jagadish

In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.

View original: http://arxiv.org/abs/1303.2771