Nina Eikenberg, Kumar Ganesan, Kin Kiong Lee, Mark T. Edmonds, Laurens H. Willems van Beveren, Steven Prawer
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
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http://arxiv.org/abs/1303.3326
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