A. V. Shtyk, M. V. Feigel'man, V. E. Kravtsov
We derive a general relation between the ultrasound attenuation rate $\tau_{ph}^{-1}(\omega) $ due to interaction with conduction electrons and the energy flow $J(T)$ between overheated electrons and phonons at bath temperature (cooling power). We demonstrate an existence of several mechanisms leading to strong enhancement of $\tau_{ph}^{-1}(\omega) $ and $J(T)$ at low frequencies/temperatures in disordered conductors; all of them are related with the Mandelstam-Leontovich relaxation mechanism. The ultrasound attenuation and the electron-phonon energy transfer are found to be sensitive to magnetic field and can be enhanced by the factor $10^2 - 10^3$ at $ B \sim 10$ Tesla. They can also be increased strongly in semiconductor heterostructures with an external gate.
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http://arxiv.org/abs/1303.4936
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