Monday, April 8, 2013

1304.1781 (Mario Weiß et al.)

Characterization of intra device mutual thermal coupling in multi finger
SiGe:C HBTs
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Mario Weiß, Amit Kumar Sahoo, Cristian Raya, Marco Santorelli, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer
This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in house designed test structure.
View original: http://arxiv.org/abs/1304.1781

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