Tuesday, April 30, 2013

1304.7511 (A. Ferreira et al.)

Extrinsic spin Hall effect in graphene    [PDF]

A. Ferreira, T. G. Rappoport, M. A. Cazalilla, A. H. Castro Neto
We show that extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules or nano-particles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities discloses that giant spin Hall currents are within the reach of current state-of-the-art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging.
View original: http://arxiv.org/abs/1304.7511

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