Thursday, May 9, 2013

1305.1837 (Daniel R. Ward et al.)

Integration of on-chip field-effect transistor switches with dopantless
Si/SiGe quantum dots for high-throughput testing
   [PDF]

Daniel R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson
Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring currently in common use. We use this approach to characterize three nominally identical quantum-point contact channels, enabling comparison of their threshold voltages for accumulation and their pinch-off voltages during a single cool-down of a dilution refrigerator.
View original: http://arxiv.org/abs/1305.1837

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