Transport properties of p-type metal-oxide-semiconductor inversion layer
in (110) and (111) silicon channel under uniaxial stress [PDF]
Fan Jun WeiValence subband and transport properties of p-type metal-oxide-semiconductor (PMOS) inversion layer in uniaxially strained (110) and (111) silicon channel have been studied theoretically in this work. Carrier concentration effective mass, conductivity effective mass, and mobility are calculated based on Luttinger-Kohn Hamiltonian.View original: http://arxiv.org/abs/1305.7037
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