1306.4394 (A. R. Ullah et al.)

Electronic comparison of InAs wurtzite and zincblende phases using
nanowire transistors    [PDF]

A. R. Ullah, H. J. Joyce, A. M. Burke, H. H. Tan, C. Jagadish, A. P. Micolich

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

View original: http://arxiv.org/abs/1306.4394