Wednesday, July 17, 2013

1307.4151 (K. Shinokita et al.)

Large Enhancement of the Photoluminescence Emission of Photoexcited
Undoped GaAs Quantum Wells Induced by an Intense Single-Cycle Terahertz Pulse

K. Shinokita, H. Hirori, K. Tanaka, T. Mochizuki, C. Kim, H. Akiyama, L. N. Pfeiffer, K. W. West
Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the one-picosecond period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.
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