T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda
We have observed an apparent metal to insulator transition in a phosphorous
doped silicon quantum dot in contradiction with theoretical predictions.
Current-voltage characteristics as well as temperature and magnetic field
dependencies of the conductivity, clearly point to the absence of a metallic
phase at low temperature but privilege a local enhancement of localization in
one of the tunnel barrier due to shallow energy defects and a strong
modification in the tunneling rates.
View original:
http://arxiv.org/abs/1109.4804
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