Nahid A Jahan, Claus Hermannstädter, Jae-Hoon Huh, Hirotaka Sasakura, Thomas J Rotter, Pankaj Ahirwar, Ganesh Balakrishnan, Kouichi Akahane, Masahide Sasaki, Hidekazu Kumano, Ikuo Suemune
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of
high-density InAs quantum dots and dashes, which were grown on InP substrates.
We analyze the temperature dependence of the recombination and carrier
distribution on the alloy composition of the barrier materials, InGaAlAs, and
on the existence of a wetting layer. Carrier escape and transfer are discussed
based on temperature dependent photoluminescence measurements and theoretical
considerations about the heterostructures' confinement energies and band
structure. We propose two different contributions to the thermal quenching,
which can explain the observations for both the quantum dot and dash samples.
Among these one is a unique phenomenon for high density quantum dot/dash
ensembles which is related to significant inter-dot/dash coupling. With the
goal ahead to use these dots and dashes for quantum optical applications on the
single-dot/dash level in the telecommunication C band as well as at elevated
temperatures we present first steps towards the realization of such devices.
View original:
http://arxiv.org/abs/1202.1360
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