1202.4273 (Theodore Choi et al.)

Counting statistics in an InAs nanowire quantum dot with a vertically
coupled charge detector    [PDF]

Theodore Choi, Thomas Ihn, Silke Schön, Klaus Ensslin

A gate-defined quantum dot in an InAs nanowire is fabricated on top of a
quantum point contact realized in a two-dimensional electron gas. The strong
coupling between these two quantum devices is used to perform time-averaged as
well as time-resolved charge detection experiments for electron flow through
the quantum dot. We demonstrate that the Fano factor describing shot noise or
time-correlations in single-electron transport depends in the theoretically
expected way on the asymmetry of the tunneling barriers even in a regime where
the thermal energy $k_\mathrm{B}T$ is comparable to the single-particle level
spacing in the dot.

View original: http://arxiv.org/abs/1202.4273