1207.0251 (J. L. Cardoso et al.)

Engineering a spin-fet: spin-orbit phenomena and spin transport induced
by a gate electric field    [PDF]

J. L. Cardoso, H. Hernández-Saldaña

In this work, we show that a gate electric field, applied in the base of the field-effect devices, leads to inducing spin-orbit interactions (Rashba and linear Dresselhauss) and confines the transport electrons in a two-dimensional electron gas. On the basis of these phenomena we solve analytically the Pauli equation when the Rashba strength and the linear Dresselhaus one are equal, for a tuning value of the gate electric field $\mathcal{E}_g^*$. Using the transfer matrix approach, we provide a joint description of the transport by varying the bias electric field, $\mathcal{E}_b$. We can flip the spin of the incident electrons, or block the spin-down completely. The robustness of this behavior is proved when $\mathcal{E}_g^*$ changes by $\mathcal{E}_g^* \pm \delta \mathcal{E}_g$.

View original: http://arxiv.org/abs/1207.0251