Wednesday, September 5, 2012

1209.0318 (N. Ubrig et al.)

Infrared spectroscopy of hole doped ABA-stacked trilayer graphene    [PDF]

N. Ubrig, P. Blake, D. van der Marel, A. B. Kuzmenko
Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the {\pi}-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.
View original: http://arxiv.org/abs/1209.0318

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