1301.5181 (I. V. Iorsh et al.)

Rashba plasmon-polaritons in semiconductor heterostructures    [PDF]

I. V. Iorsh, V. M. Kovalev, M. A. Kaliteevski, I. G. Savenko

We propose a concept of electrical surface plasmon-polariton amplification in shifted-band semiconductor heterostructures. We consider a surface plasmon emission by an asymmetric semiconductor quantum well - insulator - metal layer system, where the plasmon generation occurs on the indirect transition between the shifted minimum of the Conduction band and the $\Gamma$-maximum of the Valence band. The Conduction band bottom (lowest energy profile) is modulated due to the spin-orbit interaction effect. The matrix element of the transition is calculated and the particular system of alloys is considered.

View original: http://arxiv.org/abs/1301.5181