Tuesday, February 26, 2013

1302.5748 (Adrian G. Swartz et al.)

Effect of in-situ deposition of Mg adatoms on spin relaxation in
graphene
   [PDF]

Adrian G. Swartz, Jen-Ru Chen, Kathleen M. McCreary, Patrick M. Odenthal, Wei Han, Roland K. Kawakami
We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport behavior. All measurements are performed on non-local graphene tunneling spin valves exposed in-situ to Mg adatoms, thus systematically introducing atomic-scale charged impurity scattering. While charge transport properties exhibit decreased mobility and decreased momentum scattering times, the observed spin lifetimes are not significantly affected indicating that charged impurity scattering is inconsequential in the present regime of spin relaxation times.
View original: http://arxiv.org/abs/1302.5748

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