T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko
In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene in light of their possible application in quantum resistance metrology.
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http://arxiv.org/abs/1303.3749
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