B. Sachs, L. Britnell, T. O. Wehling, A. Eckmann, R. Jalil, B. D. Belle, A. I. Lichtenstein, M. I. Katsnelson, K. S. Novoselov
We present a joint theoretical and experimental investigation of charge doping and elec- tronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2 . Combining density functional theory with Raman and photovoltaic experi- ments, we show that impurities in MoS2 induce electron doping of graphene. Furthermore, we find that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows to use the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.
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http://arxiv.org/abs/1304.2236
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