B. Gharekhanlou, S. A. Khorasani, R. Sarvari
The celebrated monolayer graphene, as a gapless semimetal, may be hydrogenated to obtain a semiconductor with an energy gap, named graphane. The planar arrangement and unique physical and electronic transport features of graphene, combined with the possibility of doping graphane, allows patterning and creation of p and n regions, in such a way that two-dimensional p-n rectifying junctions become practicable. Our recent analysis has revealed that ideal I-V characteristics for such junctions may be expected. However, the theory of planar junctions turns out to be very much different to that of the standard bulk junctions. Based on this theoretical model of planar graphane diodes, here we construct a physical model to predict the behaviour of bipolar junction transistors based on graphane. We derive the small-signal equivalent model and estimate the performance of the device. A moderate current gain of about 100 and mild threshold frequency of 57MHz, but exceedingly small power-delay product of only 8x10^{-6}aJ is expected.
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http://arxiv.org/abs/1304.2238
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