1305.3673 (Keliang He et al.)

Experimental demonstration of continuous electronic structure tuning via
strain in atomically thin MoS2    [PDF]

Keliang He, Charles Poole, Kin Fai Mak, Jie Shan

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, have been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of twodimensional crystals for applications in flexible electronics and optoelectronics.

View original: http://arxiv.org/abs/1305.3673