Wednesday, June 5, 2013

1306.0888 (Chen Fang et al.)

Large Chern Number Quantum Anomalous Hall Effect In Thin-film
Topological Crystalline Insulators
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Chen Fang, Matthew J. Gilbert, B. Andrei Bernevig
Quantum anomalous Hall (QAH) insulators are two-dimensional (2D) insulating states exhibiting properties similar to those of quantum Hall states but without external magnetic field. They have quantized Hall conductance $\sigma^H=Ce^2/h$, where integer $C$ is called the Chern number, and represents the number of gapless edge modes. Recent experiments demonstrated that chromium doped thin-film (Bi,Sb)$_2$Te$_3$ is a QAH insulator with Chern number $C=\pm1$. Here we theoretically predict that thin-film topological crystalline insulators (TCI) can host various QAH phases, when doped by ferromagnetically ordered dopants. Any Chern number between $\pm4$ can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through proximity effect and (c) the thickness of the thin film. The tunable Chern numbers found in TCI possess significant potential for ultra-low power information processing applications.
View original: http://arxiv.org/abs/1306.0888

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