D. E. Reiter, S. Lüker, K. Gawarecki, A. Grodecka-Grad, P. Machnikowski, V. M. Axt, T. Kuhn
The effect of acoustic phonons on different light-induced excitations of a semiconductor quantum dot is investigated. Resonant excitation of the quantum dot leads to Rabi oscillations, which are damped due to the phonon interaction. When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes. For frequency-swept excitations a population inversion is achieved through adiabatic rapid passage, but the inversion is also damped by phonons. For all three scenarios the influence of the phonons depends non-monotonically on the pulse area.
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http://arxiv.org/abs/1207.6660
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