Wednesday, October 17, 2012

1210.4306 (Vladimir L. Korenev)

Giant spin torque in systems with anisotropic exchange interaction    [PDF]

Vladimir L. Korenev
Control of magnetic domain wall movement by the spin polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low density current. Here I show that a strongly anisotropic exchange interaction between mobile charge carriers and localized magnetic moments enormously increases the current induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control domain wall motion by low current density in ferromagnetic semiconductors, ferromagnet semiconductor hybrids and metals with rare earth magnetic atoms. The experimental observation of the anisotropic torque in the ferromagnet semiconductor quantum well hybrid will facilitate the integration of ferromagnetism into semiconductor electronics and the creation of all in one chip computer.
View original: http://arxiv.org/abs/1210.4306

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