1301.7441 (Peter Krogstrup et al.)

Theoretical Formalism and Modeling of III-V Nanowire Growth Dynamics    [PDF]

Peter Krogstrup, Henrik I. Jørgensen, Erik Johnson, Morten Hannibal Madsen, Claus B. Sørensen, Anna Fontcuberta i Morral, Martin Aagesen, Jesper Nygård, Frank Glas

We present a detailed and original theoretical framework which can serve as a basis to model and understand the complex dynamical mechanisms of III-V NW crystal growth. The theory is formulated in terms of the basic control parameters, temperature and pressures/beam fluxes, and can be used to predict the outcome of nanowire growth experiments. Self-catalyzed GaAs nanowire growth on Si substrates is used as a model system. In-depth dynamical simulations based on the theory show a new level of detail when comparing between modeling and experiments.

View original: http://arxiv.org/abs/1301.7441