Olli Herranen, Deep Talukdar, Markus Ahlskog
We report an experimental noise study of intermediate sized ballistic semiconducting multiwalled carbon nanotube (MWNT) devices. In this channel limited devices with no significant Schottky barriers(SB) the noise is shown to originate from the intrinsic potential fluctuations of charge traps in the gate dielectric. The gate dependence of normalized noise can be explained using a charge noise model. The noise behavior indicates that intermediate sized MWNTs are found to act like single wall carbon nanotube devices with negligible Schottky barriers. The study bridges the gap in the noise literature for SWNTs and large diameter MWNTs.
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http://arxiv.org/abs/1304.2851
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