1304.2871 (R. Li et al.)

Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot    [PDF]

R. Li, F. E. Hudson, A. S. Dzurak, A. R. Hamilton

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and reservoirs. Clear Coulomb blockade oscillations are observed, and source-drain biasing measurements show that it is possible to deplete the dot down to the few hole regime, with excited states clearly visible. The architecture is sufficiently versatile that a second hole dot could be induced adjacent to the first one.

View original: http://arxiv.org/abs/1304.2871