Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee
We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, and suppression of DIBL and GIDL. However, these full-band simulations also exhibit limited transconductance and even suggest possible negative differential resistance in the output characteristics associated with the narrow width in energy of the lowest conduction band.
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http://arxiv.org/abs/1304.2990
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