D. A. Bahamon, Vitor M. Pereira
To address the robustness of the transport gap induced by locally strained regions in graphene nanostructures, the effect of disorder and smoothness of deformation is investigated within the Landauer-B\"uttiker formalism. The electronic conductance across strained junctions and barriers in graphene nanoribbons is calculated numerically, with and without various types of disorder, and considering smooth and sharp strain junctions. In contrast to electrostatic barriers in conventional systems --- where a smooth barrier leads to increased transmission --- as well as in graphene --- where s smooth potential barrier is very detrimental for Klein tunneling at non-perpendicular incidence ---, a smooth strain barrier in graphene is as efficient in suppressing transport as a sharp one. In addition, hopping (or strain) inhomogeneity in the interface region does not visibly degrade the transport gap. These two factors show that the strain-induced transport gap at a strain junction is robust to realistic strain conditions.
View original:
http://arxiv.org/abs/1308.0139
No comments:
Post a Comment